HVS supplies turn-key Microwave Plasma Processing Systems for plasma enhanced chemical vapor deposition (PECVD) of thin films as well as plasma cleaning or treatment and custom applications. The plasma applicator is connected to the high power microwave microwave source, also provided by HVS.

A block diagram of the system is shown. Custom software is available for the control of all parameters: microwave power, temperature, gas pressure and flow rate. Mass flow controllers control the flow rate and gas mixture ratio. A butterfly exhaust valve controls the pressure. The temperature is measured using an optical pyrometer.

As a example, a scanning electron micrograph (SEM) of the diamond thin film deposted with an HVS system is shown. The gas composition is 1% methane in hydrogen at a pressure of 90 Torr and temperature of 960°C. The substrate for the sample shown is aluminum nitride and the quality of the diamond film is equivalent to those obtained on silicon substrates. The graph shown is a Raman sprectograph of the diamond film. The peak at 1336 corresponds to diamond while the peak at 1559 corresponds to amorphous carbon. The relative intensities indicate that it is a high quality diamond film.